Dartmouth Scanning Probe Microscopy Publications
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T. Hochwitz, A. K. Henning, C. G. Levey, C. P. Daghlian, J. Slinkman, J. Never, P. Kaszuba, R. Gluck, S. Hoffman, and M. O'Boyle, "Failure analysis using scanning Kelvin probe microscopy." 1994 IBM Failure Analysis Worldwide Technical Exchange, Session O-5 (IBM Microelectronics, Burlington, VT, 1994). {Conference presentation and Proceedings article}
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A. K. Henning, T. Hochwitz, C. P. Daghlian, J. Slinkman, J. Never, P. Kaszuba, and S. Hoffman, "2D dopant profiling using scanning Kelvin probe microscopy." 1994 IBM Failure Analysis Worldwide Technical Exchange, Session O-7 (IBM Microelectronics, Burlington, VT, 1994). {Conference presentation and Proceedings article}
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T. Hochwitz, A. K. Henning, C. P. Daghlian, and J. Slinkman, "Failure analysis with a Kelvin probe microscope." Presented (by T. Hochwitz) at the 20th International Symposium for Testing and Failure Analysis, November 1994. {Invited conference presentation}
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A. K. Henning, T. Hochwitz, J. Slinkman, J. Never, S. Hoffman, P. Kaszuba, and C. Daghlian, "Two-dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy." Journal of Applied Physics 77, pp. 1888-1896 (1995). {Journal article}
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T. Hochwitz, A. K. Henning, C. P. Daghlian, R. Gluck , R. Bolam, P. Coutu, and J. Slinkman, "DRAM failure analysis with the force-based Kelvin probe." Int'l. Reliability Physics Symposium, pp. 217-222 (IEEE, Piscataway, NJ, 1995). {Conference presentation and Proceedings article}
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T. Hochwitz, A. K. Henning, C. G. Levey, C. P. Daghlian, J. Slinkman, "Capacitive Effects on Quantitative Dopant Profiling with Scanned Electrostatic Force Microscopes." Proceedings, Third Intl. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, pp. 51.1-51.9 (American Vacuum Society, 1995), and J. Vac. Sci. Technol. B, 14, 440 (1996).
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T. Hochwitz, A. K. Henning, C. G. Levey, C. P. Daghlian, J. Slinkman, James Never, Phil Kaszuba, Randy Wells, John Pekarik, Bob Gluck, "Imaging Dopant Profiles of Integrated Circuit Devices with the Force-Based Scanning Kelvin Probe Microscope." Proceedings, Third International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, pp. 47.1-47.8 (American Vacuum Society, 1995). {Conference presentation and Proceedings article} [Will also appear in the January 1996 issue of the Journal of Vacuum Science and Technology B as a full journal article.]
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T. Hochwitz, A. K. Henning, C. G. Levey, C. P. Daghlian, J. Slinkman, J. Never, P. Kaszuba, R. Gluck, R. Wells, R. Bolam, and P. Coutu, "Surface Studies with the Force-Based Scanning Kelvin Probe." Presented (by T. Hochwitz) at the Industrial Applications of Scanned Probe Microscopy Workshop, May 2-3, 1995, National Institute of Standards and Technology, Gaithersburg, MD. {Workshop poster}
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A. K. Henning and T. Hochwitz, "Review: Scanning Probe Microscopy for 2-D Semiconductor Dopant Profiling and Device Failure Analysis." Presented (by A. K. Henning) at the Scanning Microscopy International conference, May 9-11, 1995, Houston, TX. {Conference presentation}
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A. K. Henning, T. Hochwitz, C. G. Levey, C. P. Daghlian, J. Slinkman, J. Never, P. Kaszuba, R. Gluck, R. Wells, R. Bolam, and P. Coutu, "Applications of Scanning Probe Microscopy to Problems in Microelectronic Device Failure Analysis." Presented (by A. K. Henning) at the Scanning Microscopy International conference, May 9-11, 1995, Houston, TX. {Conference presentation}
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A. K. Henning and T. Hochwitz, "Scanning Probe Microscopy for 2-D Semiconductor Dopant Profiling and Device Failure Analysis." To be presented (by A. K. Henning) at the 4th International Workshop on Beam Injection Assessment of Defects in Semiconductors, June 3-6, 1996, El Escorial, SPAIN. {Invited conference presentation}
Christopher.G.Levey@
dartmouth.edu